Effect of Annealing Temperature on GMR of [NiFeCo(10 nm)/Ag(10 nm)]×20 Multilayer Film

查看全文 作　　者：Yuding HE, Shejun HU, Jian LI and Guangrong XIECollege of Material and Energy, Guangdong University of Technology, Guangzhou 510643, China

出　　处：《Journal of Materials Science & Technology》索引2004年第20卷第2期,共3页

基　　金：This work was supported by the National Natural Science Foundation of China under grant No.59771026. 摘　　要：The composition, phase structure, and microstructure of the discontinuous multilayer films [NiFeCo(10 nm)/Ag(10 nm)]×20 annealed at temperature 280,320,360 and 400℃, respectively were investigated. GMR (giant magnetoresistance) ratios of the multilayer films were measured at different temperatures. The results showed that FeNia precipitated at 360℃ and dissolved at 400℃. The films annealed at 360℃ for I h exhibited the highest GMR ratio 11% when saturation field was equal to 79.6 kA/m. 关键词：退火温度 GMR 磁致电阻 [NiFeCo(10nm)/Ag(10nm)]×20多层薄膜微观结构相结构

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Effect of Annealing Temperature on GMR of [NiFeCo(10 nm)/Ag(10 nm)]×20 Multilayer Film

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