A New Structure High—Voltage Power MOSFET with Improved Body Diode Switching Speed

查看全文 作　　者：CHENGXu LIUXingming WUYu WANGZhe [1]KANGBaowei 机构地区：[1]DepartmentofElectronics,BeijingPolytechnicUniversity,Beijing100022,China 出　　处：《Chinese Journal of Electronics》索引2003年第12卷第2期,共4页 摘　　要：A new structure for high-voltage power MOSFETs is proposed. The molybdenum-silicon Schot-tky contact is integrated into each cell of the power MOS-FET to improve its body-diode switching speed. It has been demonstrated that a 500V/2A power MOSFET with a Schottky-contact-area ratio of 26% exhibits only a half of the body-diode recovery charge of a conventional MOS-FET without Schottky contact. 关 键 词：功率MOSFET 二极管 肖特基触点 钼 开关速度