Preface to Special Issue on Towards High Performance Ga_(2)O_(3) Electronics:Power Devices and DUV Optoelectronic Devices(Ⅱ)

查看全文 作　　者：Shibing [1]Long;Genquan [2]Han;Yuhao [3]Zhang;Yibo [4]Wang;Zhongming [5]Wei 机构地区：[1]School of Microelectronics,University of Science and Technology of China,Hefei 230026,China;[2]School of Microelectronics,Xidian University,Xi’an 710071,China;[3]Center for Power Electronics Systems(CPES),Virginia Polytechnic Institute and State University,Blacksburg,VA 24060,USA;[4]Platform for Characterization&Test,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences,Suzhou 215123,China;[5]Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China 出　　处：《Journal of Semiconductors》索引2023年第44卷第7期,共3页 摘　　要：Gallium oxide(Ga_(2)O_(3))has garnered world-wide atten-tion as an ultrawide-bandgap semiconductor material from the area of power electronics and DUV optical devices benefit-ing from its outstanding electronic and optoelectronic proper-ties.For one thing,since Ga_(2)O_(3)features high critical break-down field of 8 MV/cm and Baliga’s figure of merit(BFOM)of 3444,it is a promising candidate for advanced high-power applications.For another thing,due to the bandgap directly corresponding to the deep-ultraviolet(DUV)region,Ga_(2)O_(3)is widely used in DUV optoelectronic devices. 关 键 词：OPTOELECTRONIC ULTRAVIOLET