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Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor

查看全文 作  者:Hongrui [1,2]Lv;Xianglong [3]Shi;Yujie [1,2]Ai;Zhe [1]Liu;Defeng [1,4]Lin;Lifang [1]Jia;Zhe [1]Cheng;Jie [1]Yang;Yun [1,2]Zhang 高影响力作者 机构地区:[1]Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;[2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;[3]Beijing Aerospace Micro-electronics Technology Co.,Beijing 100854,China;[4]Lishui Zhongke Semiconductor Material Co.,Ltd.,Lishui 323000,China高影响力机构 出  处:《Journal of Semiconductors》索引2022年第43卷第11期,共6页高影响力期刊 基  金:The research is supported by the National Natural Sciences Foundation of China(Grant No.61974137);the One Hundred Person project of the Chinese Academy of Science. 摘  要:Surface acoustic wave(SAW)resonator with outstanding quality factors of 4829/6775 at the resonant/anti-resonant frequencies has been demonstrated on C-doped semi-insulating bulk GaN.The impact of device parameters including aspect ratio of length to width of resonators,number of interdigital transducers,and acoustic propagation direction on resonator performance have been studied.For the first time,we demonstrate wireless temperature sensing from 21.6 to 120℃ with a stable temperature coefficient of frequency of–24.3 ppm/℃ on bulk GaN-based SAW resonators. 关 键 词:surface acoustic wave RESONATOR gallium nitride quality factor temperature sensor
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