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Thermoelectric properties of In-Hg co-doping in SnTe:Energy band engineering

查看全文 作　　者：Xiaofang [1,3]Tan;Guoqiang [1]Liu;Jingtao [1]Xu;Xiaojian [1]Tan;Hezhu [1]Shao;Haoyang [1]Hu;Haochuan [1]Jiang;Yalin [2]Lu;Jun [1]Jiang 高影响力作者 机构地区：[1]Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Science,Ningbo 315201,China;[2]National Synchrotron Radiation Laboratory,The University of Science and Technology of China,Hefei,Anhui,230029,China;[3]Nano Science and Technology Institute,The University of Science and Technology of China,Suzhou 215123,China高影响力机构 出　　处：《Journal of Materiomics》索引2018年第4卷第1期,共6页高影响力期刊 基　　金：This work was supported by the National Natural Science Foundation of China(11404350,11404348,and 11234012);the Zhejiang Provincial Science Foundation for Distinguished Young Scholars(LR16E020001);the Ningbo Science and Technology Innovation Team(2014B82004);the Natural Science Foundation of Zhejiang Province(LY18A040008,and LY18E020017);the Ningbo Municipal Natural Science Foundation(2017A610107). 摘　　要：Synergistic effect of band convergence and resonant level could be manipulated in SnTe by co-doping In and Hg,leading to a potential thermoelectric performance enhancement in a much wider temperature range.In this work we carefully investigated thermoelectric properties of the In-Hg co-doped SnTe,synthesized by a hot pressing method.With this co-doping the Seebeck coefficients of the co-doped samples were greatly improved(over 50 mVK^(-1))at the room temperature.Although power factors of the In-Hg co-doped SnTe were also able to be optimized,the peak ZT(0.9 at 850 K in Sn_(0.98)Bi_(0.02)Te-1%HgInTe_(2)),however,is not high enough when comparing to other co-doped SnTe systems.This may be caused by the relatively high lattice thermal conductivity.An apparent competition between band convergence doping and resonant level doping was observed in our experiment.The results suggest that band engineering via co-doping should be further understood in order to optimize the thermoelectric properties inside the material system. 关 键 词：THERMOELECTRIC CO-DOPING SnTe In-Hg
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