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Epitaxial Lift-Off of Flexible GaN‑Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

查看全文 作　　者：Xin [1]Chen;Jianqi [1]Dong;Chenguang [2]He;Longfei [2]He;Zhitao [2]Chen;Shuti [1]Li;Kang [2]Zhang;Xingfu [1]Wang;Zhong Lin [3,4]Wang 高影响力作者 机构地区：[1]Laboratory of Nanophotonic Functional Materials and Devices,Institute of Semiconductor Science and Technology,South China Normal University,Guangzhou 510631,People’s Republic of China;[2]Institute of Semiconductor,Guangdong Academy of Sciences,Guangzhou 510651,People’s Republic of China;[3]Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 100083,People’s Republic of China;[4]School of Materials Science and Engineering,Georgia Institute of Technology,Atlanta,GA 30332‑0245,USA高影响力机构 出　　处：《Nano-Micro Letters》索引2021年第13卷第4期,共13页高影响力期刊 基　　金：Key-Area Research and Development Program of Guangdong Province(Nos.2020B010172001,2020B010174004);GDAS’Project of Science and Technology Development(No.2018GDASCX-0112);Science and Technology Program of Guangzhou(No.2019050001);National Key Research and Development Program of China(No.2017YFB0404100);National Natural Science Foundation of China(Grant No.11804103);Guangdong Natural Science Foundation for Distinguished Young Scholars(Grant No.2018B030306048). 摘　　要：High-electron-mobility transistors(HEMTs)are a promising device in the field of radio frequency and wireless communication.However,to unlock the full potential of HEMTs,the fabrication of large-size flexible HEMTs is required.Herein,a large-sized(>2 cm^(2))of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique.The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas(2DEG)and phonons.The saturation current of the flexible HEMT is enhanced by 3.15%under the 0.547%tensile condition,and the thermal degradation of the HEMT was also obviously suppressed under compressive straining.The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism.This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs,but also demonstrates a low-cost method to optimize its electronic and thermal properties. 关 键 词：AlGaN/AlN/GaN heterojunction Epitaxial lift-off Flexible membrane Two-dimensional electron gas Piezotronic effect
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