Large-area surface-enhanced Raman scattering-active substrates fabricated by femtosecond laser ablation

查看全文 作　　者：ZHU [1]ZhiQing;YAN [1]ZhenDong;ZHAN [1]Peng;WANG [1]ZhenLin

机构地区：[1]School of Physics and National Laboratory of Solid State Microstructures,Nanjing University

出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2013年第56卷第9期,共4页

基　　金：supported by the National Natural Science Foundation of China (Grant Nos.51271092 and 11274160) 摘　　要：A rapid and simple approach to fabricate large-area surface-enhanced Raman scattering-active(SERS-active) substrates is reported.The substrates are fabricated by using femtosecond laser(fs-laser) direct writing on Silicon wafers,followed by thin-film coating of metal such as gold.The substrates are demonstrated to exhibit signal homogeneity and good enhancement ability for SERS.The maximum enhancement factor(EF) up to 3×10 7 of such SERS substrates for rhodamine 6G(R6G) at 785 nm excitation wavelength was measured.This technique could demonstrate a functional microchip with SERS capability of signal homogeneity,high sensitivity and chemical stability. 关键词：表面增强拉曼散射 SERS活性飞秒激光激光烧蚀面积基底制备罗丹明6G

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Large-area surface-enhanced Raman scattering-active substrates fabricated by femtosecond laser ablation

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