Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions

查看全文 作　　者：GENG [1,2]Chao;LIU [1]Jie;ZHANG [1,2]ZhanGang;HOU [1]MingDong;SUN [1]YouMei;XI [1,2]Kai;GU [1,2]Song;DUAN [1]JingLai;YAO [1]HuiJun;MO [1]Dan;LUO [1]Jie

机构地区：[1]Institute of Modern Physics,Chinese Academy of Sciences;[2]University of Chinese Academy of Sciences

出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2013年第56卷第6期,共6页

基　　金：supported by the National Natural Science Foundation of China(Grant Nos. 11179003,10975164,10805062 and 11005134) 摘　　要：The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence are examined,and related geometrical construction and critical charge are quantified.The MUlti-Functional Package for SEU Analysis(MUFPSA) has been successfully programmed and applied for SEU occurrence after the completion of device geometrical construction,critical charge,and SEU cross section calculation.The proposed MUFPSA has yielded a good agreement with MRED.Specifically,the results show that higher LET incident ions lead to increased SEU vulnerability due to more diffusion and higher energy deposition.In addition,the analytical method of radial ionization profile provides a good complementary interpretation. 关键词：GEANT4 蒙特卡罗模拟重离子单事件诱导几何结构移动设备 SEU

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Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions

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