InAsSb thick epilayers applied to long wavelength photoconductors

查看全文 作　　者：Yu-zhu [1]Gao;Xiu-ying [1]Gong;Guang-hui [2]Wu;Yan-bin [2]Feng;Takamitsu [3]Makino;Hirofumi [3]Kan;Tadanobu [4]Koyama;Yasuhiro [4]Hayakawa

机构地区：[1]School of Electronics and Information Engineering, Tongji University;[2]Huaxing Infrared Device Co.;[3]Hamamatsu Photonics K.K.;[4]Research Institute of Electronics, Shizuoka University

出　　处：《International Journal of Minerals,Metallurgy and Materials》索引2013年第20卷第4期,共4页

基　　金：financially supported by the National Natural Science Foundation of China (No. 60777022);the Fundamental Research Funds for the Central Universities 摘　　要：InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy (ME). Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, indicating the good quality of the epilayers, and the thickness of the epilayers is 40 μm. Photoconductors were fabricated using InAs 0.052Sb0.948 thick epilayers grown by ME. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10 μm. The peak detectivity D*λp reached 5.4 × 109 cm·Hz 1/2 ·W-1 for the immersed detectors. The detectivity D*was 9.3 × 108 and 1.3 × 108 cm·Hz 1/2 ·W-1 at the wavelength of 8 and 9 μm, respectively. The good performance of the uncooled InAsSb detectors was experimentally validated. 关键词：外延层 INASSB 长波长光导鼓锑化铟探测器扫描电子显微镜应用外延生长

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InAsSb thick epilayers applied to long wavelength photoconductors

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