Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC

查看全文 作　　者：SONG [1]QingWen;ZHANG [1]YuMing;ZHANG [1]YiMen;TANG [1]XiaoYan

机构地区：[1]Key Luboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidiau University,Xi'an 710071,China

出　　处：《Science China(Technological Sciences)》索引2012年第55卷第12期,共4页

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 61006060, 61176070) 摘　　要：Multiple-energy aluminium (Al+ ) implantation into 4H-SiC (0001) epilayer and activation anneal with a graphite encapsulation layer were investigated in this paper. Measurements showed that the implanted Al+ box doping profile was formed and a high ion activation ratio of 78% was achieved by 40 min annealing at 1600°C using a horizontal chemical vapor deposition (CVD) reactor. The step bunching effect associated with the high temperature post implantation activation annealing (PIA) process was dramatically suppressed by using the graphite encapsulation layer. And a flat and smooth surface with a small average surface roughness (RMS) value of around 1.16 nm was achieved for the implanted 4H-SiC after the PIA process. It was demonstrated that this surface protection technique is a quite effective process for 4H-SiC power devices fabrication. 关键词：4H-SIC 离子激活表面形貌植入化学气相沉积表面保护技术铝表面粗糙度

相关文献

参考文献（9）
引证文献（3）
耦合文献（0）

参考文献(9)

引证文献(3)

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC

参考文献(9)

引证文献(3)

用户提示