The formation and stability of Si_(1-x)C_x alloys in Si implanted with carbon ions

查看全文 作　　者：WANG Yinshu, LI Jinmin, JIN Yunfan, WANG Yutian, SUN Guosheng & LIN Lanying1. Department of Physics, Beijing Normal University, Beijing 100875, China;2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China

出　　处：《Chinese Science Bulletin》索引2001年第46卷第3期,共5页

摘　　要：Si1-xCx alloys of carbon (C) concentration between 0.6%-1.0% were grown in Si by ion implantation and high temperature annealing. The formation of Si1-xCx alloys under different ion doses and their stability during annealing were studied. If the implanted dose was less than that for amorphizing Si crystals, the implanted C atoms would like to combine with defects produced during implantation and it was difficult to form Si1-xCx alloys after being annealed at 850℃. With the increment of implanted C ion doses, the lattice damage increased and it was easier to form Si1-xCx alloys. But the lattice strain would become saturate and only part of implanted carbon atoms would occupy the substitutional positions to form Si1-xCx alloys as the implanted carbon dose increased to a certain degree. Once Si1-xCx alloys were formed, they were stable at 950℃, but part of their strain would release as the annealing temperature increased to 1 000℃. Stability of the alloys became worse with the increment of carbon 关键词：ion implantation Si1-xCx ALLOYS STABILITY of Si1-xCx alloys.

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The formation and stability of Si_(1-x)C_x alloys in Si implanted with carbon ions

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