High Power SiGe X-Band (8~10GHz) Heterojunction Bipolar Transistors and Amplifiers

查看全文 作　　者：Ma [1]Zhenqiang;Wang [1]Guogong;Jiang [1]Ningyue;Ponchak G [2]E;Alterovitz S [2]A 机构地区：[1]Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA;[2]NASA-Glenn Research Center, Cleveland, OH 44135, USA 出　　处：《Journal of Semiconductors》索引2006年第27卷第2期,共6页 基　　金：ProjectsupportedbytheNSF(No.ECS0323717) 关 键 词：晶体管 放大器 基极 发射极 掺杂