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31篇 您的检索式：作者名="R Degraeve"

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	题名	作者	年代	出处	被引量
1	Analysis of an indus- trial component commonality problem 显示文摘	Jans R Degraeve Z Schepens L	2008	European Journal of Operational Research2008，186，2：	1
2	Analysis of an in- dustrial component commonality problem 显示文摘	Jans R J Degraeve Z Schepens L	2008	European Journal of Operational Research2008，186，：	1
3	Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability 显示文摘	KACZER B DEGRAEVE R RASRAS M	2002	IEEE Trans Elec Dev2002，49，3：	1
4	A new Dantzig-Wolfe reformulation andBranch-and-Price algorithm for the capacitated lot-sizingproblem with setup times显示文摘	Degraeve Z Jans R	2007	Operations Research2007，55，5：	1
5	Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study 显示文摘	KACZER B DEGRAEVE R RASRAS M	2002	Microelec Reliab2002，42，5：	1
6	New insights in the relation between electron trap generation and the statistical properties of oxide breakdown显示文摘	DEGRAEVE R GROESENEKEN G BELLENS R	1998	IEEE Trans Elec Dev1998，45，4：	1
7	Uhrathin ( < 4 nm) SiO2 and Si--O--N gate dielectric layers for silicon microelectron- ics: understanding the processing, structure, and physical and electrical limits显示文摘	Green M L Gusev E P Degraeve R	2001	Journal of Applied Physics2001，90，5：	1
8	Meta-heuristics for dynamic lot sizing:a review and comparison of solution approaches显示文摘	JANS R DEGRAEVE Z	2007	European Journal of Operational Research2007，177，3：	1
9	Temperature dependence of the negative bias temperature instability in the framework of dispersive transport 显示文摘	KACZER B ARKHIPOV V DEGRAEVE R	2005	Appl Phys Lett2005，14，14：	1
10	Analysis of an industrial component commonality problem显示文摘	ANS R DEGRAEVE Z SCHEPENS L	2008	European Journal of Operational Research2008，186，2：	1
11	A con- sistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique 显示文摘	CHO M DEGRAEVE R ROUSSEL P	2010	Sol Sta Elec2010，54，：	1
12	显示文摘	Degraeve R Mertens P W	1999	J Appl Phys1999，86，11：	1
13	Modeling industrial lot sizing problems: A review 显示文摘	Jans R Degraeve Z	2008	International Journal of Production Research2008，46，：	1
14	A new Dantzig-Wolfe reformulation and branch-and-price algorithm for the capacitated lot-sizing problem with setup times显示文摘	Degraeve Z Jans R	2007	Operations Research2007，55，5：	1
15	Energy and spatial distribution of traps in SiOz/Al2O3 nMOSFETs 显示文摘	CRUPI I DEGRAEVE R GOVOREANU B	2006	IEEE Trans Dev Mater Reliab2006，6，4：	1
16	Meta-heuristics for dynamic lot-sizing:A re- view and comparison of solution approaches显示文摘	Jans R Degraeve Z	2007	European Jour- nal of Operational Research2007，177，：	1
17	Uhrathin ( < 4 nm) SiO2 and Si-O-N gate dielectrics layers for silicon microelectronies: understanding the processing, structure and physical and electrical limits显示文摘	Green M L Gusev E P Degraeve R Garfunkel E	2001	J Appl Phys (Rev)2001，90，：	1
18	Analysis and modeling of a digital CMOS circuit opera-tion and reliability after gate oxide breakdown:a casestudy显示文摘	KACZER B DEGRAEVE R RASRAS M	2002	Microelec Reliab2002，42，5：	1
19	Im-pact of MOSFET gate oxide breakdown on digital cir-cuit operation and reliability显示文摘	KACZER B DEGRAEVE R RASRAS M	2002	IEEE Trans ElecDev2002，49，3：	1
20	Consistent model for short-channel nMOS-FET after hard gate oxide breakdown显示文摘	KACZER B DEGRAEVE R DE KEERSGIETER AV	2002	IEEE TransElec Dev2002，49，3：	1

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