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488篇 您的检索式：期刊名="IEEE Trans on Electron Device"

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	题名	作者	年代	出处	被引量
1	Computer-aided two-dimensional analysis of bipolar transistors 显示文摘	Slotboom J W	1984	IEEE Trans on Electronic Devices1984，20，8：	2
2	Optical control of semiconductor closing and opening switches显示文摘	LEE C H	1990	On electron devices IEEE Trans1990，37，12：	1
3	Fast-and super-fast-warm-up cathode using novel APG/APBN heaters显示文摘	Cattelino M J Miram G V Smith B	1991	IEEE Trans on Electron Devices1991，38，10：	1
4	Study of traveling wave tube with folded-waveguide circuit shielded by photonic crystals显示文摘	Gong Yubin Yin Hairong Wei Yanyu	2010	IEEE Trans on Electron Devices2010，57，5：	1
5	Physical DMOST modeling for high-voltage IC CAD显示文摘	Kim Yeong-Seuk Fossum Jerry G	1990	IEEE Trans on Electron Devices1990，37，3：	1
6	Simulation of cold-test parameters and RF output power for a coupled-cavity traveling-wave tube显示文摘	Wilson J D Kory C L	1995	IEEE Trans on Electronics Devices1995，42，11：	1
7	High-per- formance junction barrier schottky rectifier with opti- mized structure 显示文摘	Wang Ying Li Ting Chen Yuxian	2012	IEEE Trans on Electron Devices2012，59，1：	1
8	Optimum design of power transistor switches显示文摘	Hower	1977	IEEE Trans on Electron Devices1977，20，4：	1
9	Pressure sensitivity in anisotropically etched thin-diaphragm pressure sensor 显示文摘	Wise K D	1979	IEEE Tran On Electron Devices1979，26，12：	1
10	Surface discharge switch design:the critical factor显示文摘	Engel T G Kristiansen M Baker M C	1991	IEEE Trans on Electron Devices1991，38，4：	1
11	Wide/multiband linearization of TWTAs using predistortion显示文摘	Katz A Gray R Dorval R	2009	IEEE Trans on Electron Devices2009，56，5：	1
12	Self-Consistent Tterative Scheme for One Dimensional Steady State Transistor Calculations显示文摘	GUMMEL H A	1964	IEEE Trans on Electron Devices1964，，11：	1
13	A model for the klystron cavity gap显示文摘	Vaughan J R M	1985	IEEE Trans on Electron Devices1985，32，11：	1
14	The effect of high fields on MOS device and circuit performance显示文摘	Sodini C G Ko P Moll J L	1984	IEEE Trans on Electron Devices1984，31，10：	1
15	Linearizability of TWTAs using predistortion techniques显示文摘	Qiu J X Abe D K Levush B	2005	IEEE Trans on Electron Devices2005，52，5：	1
16	Suppression of in-band power holes in helix traveling-wave tubes显示文摘	Gong Yubin Duan Zhaoyun Wang Wenxiang	2011	IEEE Trans on Electron Devices2011，58，5：	1
17	A static, physical VDMOS model based on the charge-sheet model显示文摘	James J Victory Scanchez Julian J Thomas A Demassa	1996	IEEE Trans on Electron Devices1996，43，1：	1
18	A new physical power MOSFET for improved simulation in power electronic design显示文摘	Victory J Miller I Scanchez J	1996	IEEE Trans on Electron Devices1996，43，1：	1
19	Effect of interface states on electron transport in 4H-SiC inversion layers显示文摘	ARNOLD E ALOK D	2001	IEEE Trans on Electron Devices2001，48，9：	1
20	Multiple extraction cavities for high power klystron显示文摘	Lee T G	1993	IEEE Trans on Electron Devices1993，，：	1

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